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RFM18N10 - N-Channel Power MOSFET

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated circuits.

Formerly developmental type TA17421.

Overview

Semiconductor RFM18N08, RFM18N10, RFP18N08, RFP18N10 18A, 80V and 100V, 0.

Key Features

  • 18A, 80V and 100V.
  • rDS(ON) = 0.100Ω.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFM18N08 RFM18N10 RFP18N08 RFP18N10.